2SC941TM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC941TM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC941TM
2SC941TM Datasheet (PDF)
2sc941tm.pdf
2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter
2sc945-y.pdf
MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC
2sc945-gr.pdf
MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC
2sc945.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733 ORDERING I
2sc945.pdf
ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati
2sc940.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION With TO-3 package High current capability Wide area of safe operation APPLICATIONS For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE
2sc945.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi
2sc945m.pdf
2SC945M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, excellent hFE linearity. / Applications General power amplifier application and low speed switching.
2sc945.pdf
2SC945 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,h FE High voltage, excellent hFE linearity. / Applications AF amplifier and low speed switching applications. / Eq
2sc945r 2sc945o 2sc945y 2sc945p 2sc945l.pdf
2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T
2sc945lt1.pdf
SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V
2sc945.pdf
SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector
2sc945.pdf
Product specification Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb High voltage and high current. Lead-free Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC945 CR SOT-23 : none is for Lead Free package; G is for Halogen Free package
2sc945-l 2sc945-h.pdf
2SC945NPN Transistors321.Base2.Emitter Features1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector curren
2sc940.pdf
isc Silicon NPN Power Transistor 2SC940DESCRIPTIONHigh Breakdown Voltage-: V = 90V(Min)CEOWide Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.Suitable for horizontal output applications in 12~24 inch B/WTV, and switching applications of 5
2sc945.pdf
isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC2143 | 3CA168
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