2SD1003. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1003 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1003

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 60 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT89

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2SD1003 datasheet

8.1. Size:211K nec
2sd1005.pdf pdf_icon

8.2. Size:223K nec
2sd1006 2sd1007.pdf pdf_icon

8.3. Size:218K nec
2sd1000.pdf pdf_icon

8.4. Size:208K nec
2sd1001.pdf pdf_icon

8.5. Size:34K panasonic
2sd1009.pdf pdf_icon

8.6. Size:72K secos
2sd1005.pdf pdf_icon

2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1

8.7. Size:178K jiangsu
2sd1005.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C

8.8. Size:337K htsemi
2sd1005.pdf pdf_icon

2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Coll

8.9. Size:357K kexin
2sd1007.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1007 1.70 0.1 Features High collector to emitter voltage VCEO 120V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) * IC (pu

8.10. Size:1048K kexin
2sd1005.pdf pdf_icon

SMD Type Transistors NPN Tr ansistors 2SD1005 1.70 0.1 Features World standard miniature package SOT-89. High collector to base voltage VCBO 100V. 0.42 0.1 0.46 0.1 Excellent dc current gain linearity hFE=80TYP. (VCE=2V, IC=500mA). 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter vo

8.11. Size:989K kexin
2sd1006.pdf pdf_icon

SMD Type Transistors SMD Type NPN Transistors 2SD1006 1.70 0.1 Features High collector to emitter voltage VCEO 100V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse

8.12. Size:1152K kexin
2sd1000.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat)

8.13. Size:1117K kexin
2sd1001.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1001 Features 1.70 0.1 High collector saturation voltage. VCE(sat) > 80V Complimentary to 2SB800 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collect

8.14. Size:627K cn shikues
2sd1006hm 2sd1006hl 2sd1006hk.pdf pdf_icon

8.15. Size:223K cn shikues
2sd1007hr 2sd1007hq 2sd1007hp.pdf pdf_icon

8.16. Size:282K cn shikues
2sd1000l 2sd1000k.pdf pdf_icon

2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625

8.17. Size:632K cn shikues
2sd1005bw 2sd1005bv 2sd1005bu.pdf pdf_icon

2SD1005 NPN Medium Power Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-basevoltage CBO 100 V V CEO Collector-emittervoltageV 80 V Emitter-base voltage VEBO 5V Collector current IC 1A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Stor

8.18. Size:1001K cn hottech
2sd1007.pdf pdf_icon

2SD1007 NPN Silicon Epitaxial Transistor FEATURES High collector to emitter voltage VCEO 120V. SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 120 V CBO Co

Otros transistores... 2SD1000LK , 2SD1000LL , 2SD1000LM , 2SD1001 , 2SD1001FK , 2SD1001FL , 2SD1001FM , 2SD1002 , 2SD1047 , 2SD1004 , 2SD1005 , 2SD1005BU , 2SD1005BV , 2SD1005BW , 2SD1006 , 2SD1006HK , 2SD1006HL .