2SD1018 Todos los transistores

 

2SD1018 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1018

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

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2SD1018 Datasheet (PDF)

8.1. 2sd1012.pdf Size:57K _sanyo

2SD1018
2SD1018

Ordering number:ENN676DPNP/NPN Epitaxial Planar Silicon Transistors2SB808/2SD1012Low-Voltage Large-CurrentAmplifier ApplicationsPackage Dimensionsunit:mm2033A[2SB808/2SD1012]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SB8083 : Base3.03.8 SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R

8.2. 2sd1011 e.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

 8.3. 2sd1010.pdf Size:38K _panasonic

2SD1018
2SD1018

Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2

8.4. 2sd1010 e.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2

 8.5. 2sd1011.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

8.6. 2sd1015.pdf Size:39K _sony

2SD1018

8.7. 2sd1016.pdf Size:182K _inchange_semiconductor

2SD1018
2SD1018

isc Product Specificationisc Silicon NPN Power Transistor 2SD1016DESCRIPTIONHigh Collector-Base Voltage-: V = 1500V(Min)CBOHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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