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2SD1018 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1018

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

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2SD1018 Datasheet (PDF)

4.1. 2sd1012.pdf Size:57K _sanyo

2SD1018
2SD1018

Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratin

4.2. 2sd1010.pdf Size:38K _panasonic

2SD1018
2SD1018

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

 4.3. 2sd1011.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27

4.4. 2sd1011 e.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27

 4.5. 2sd1010 e.pdf Size:42K _panasonic

2SD1018
2SD1018

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

4.6. 2sd1015.pdf Size:39K _sony

2SD1018

Otros transistores... 2SD1012 , 2SD1012F , 2SD1012G , 2SD1012H , 2SD1014 , 2SD1015 , 2SD1016 , 2SD1017 , 2N60 , 2SD102 , 2SD1020 , 2SD1020G , 2SD1020O , 2SD1020Y , 2SD1021 , 2SD1021G , 2SD1021O .

 
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