2SD102 Todos los transistores

 

2SD102 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD102
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 110 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.8 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO66

 Búsqueda de reemplazo de transistor bipolar 2SD102

 

2SD102 Datasheet (PDF)

 0.1. Size:132K  nec
2sd1020.pdf

2SD102
2SD102

 0.2. Size:31K  jmnic
2sd1026.pdf

2SD102

Product Specification www.jmnic.com2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di

 0.3. Size:81K  jmnic
2sd1023.pdf

2SD102
2SD102

Product Specification www.jmnic.comSilicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage O

 0.4. Size:80K  jmnic
2sd1025.pdf

2SD102
2SD102

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 200 V VCEO

 0.5. Size:301K  shindengen
2sd1024.pdf

2SD102
2SD102

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1024 Case : TO-220(T8L10)8A NPNRATINGSUnit : mm

 0.6. Size:100K  inchange semiconductor
2sd1026.pdf

2SD102
2SD102

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

 0.7. Size:211K  inchange semiconductor
2sd1023.pdf

2SD102
2SD102

isc Silicon NPN Darlington Power Transistor 2SD1023DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 0.8. Size:212K  inchange semiconductor
2sd1025.pdf

2SD102
2SD102

isc Silicon NPN Darlington Power Transistor 2SD1025DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 0.9. Size:212K  inchange semiconductor
2sd1022.pdf

2SD102
2SD102

isc Silicon NPN Darlington Power Transistor 2SD1022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 0.10. Size:211K  inchange semiconductor
2sd1024.pdf

2SD102
2SD102

isc Silicon NPN Darlington Power Transistor 2SD1024DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 0.11. Size:134K  inchange semiconductor
2sd1027.pdf

2SD102
2SD102

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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