2SD1021G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.com2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di

Product Specification www.jmnic.comSilicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage O

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 200 V VCEO

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1024 Case : TO-220(T8L10)8A NPNRATINGSUnit : mm

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

isc Silicon NPN Darlington Power Transistor 2SD1023DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD1025DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD1022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD1024DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC