2SD1022 Todos los transistores

 

2SD1022 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1022

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1022

 

2SD1022 Datasheet (PDF)

1.1. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1022
2SD1022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

4.1. 2sd1020.pdf Size:132K _nec

2SD1022
2SD1022

4.2. 2sd1023.pdf Size:81K _jmnic

2SD1022
2SD1022

Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION ·DARLINGTON ·High DC current gain ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open e

 4.3. 2sd1025.pdf Size:80K _jmnic

2SD1022
2SD1022

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION ·DARLINGTON ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Colle

4.4. 2sd1026.pdf Size:31K _jmnic

2SD1022

Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ?With TO-247 package ?Darlington transistor Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation

 4.5. 2sd1024.pdf Size:301K _shindengen

2SD1022
2SD1022

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

4.6. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1022
2SD1022

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitt

4.7. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1022
2SD1022

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base volta

4.8. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1022
2SD1022

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS

4.9. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1022
2SD1022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

4.10. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1022
2SD1022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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