2SD1032 Todos los transistores

 

2SD1032 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1032

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TOP3

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2SD1032 Datasheet (PDF)

1.1. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1032
2SD1032

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60

4.1. 2sd1033.pdf Size:201K _nec

2SD1032
2SD1032

4.2. 2sd1030 e.pdf Size:37K _panasonic

2SD1032
2SD1032

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

 4.3. 2sd1030.pdf Size:37K _panasonic

2SD1032
2SD1032

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

4.4. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1032
2SD1032

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

 4.5. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1032
2SD1032

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Abso

4.6. 2sd1033.pdf Size:1032K _kexin

2SD1032
2SD1032

SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High voltageVCEO=150V. ● Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Vo

4.7. 2sd1030.pdf Size:567K _kexin

2SD1032
2SD1032

SMD Type Transistors NPN Transistors 2SD1030 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

Otros transistores... 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2N2219 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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