2SD1035 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a

Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a

SMD Type TransistorsNPN Transistors2SD1033TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High voltageVCEO=150V. Complimentary to 2SB7680.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo

SMD Type TransistorsNPN Transistors2SD1030SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=40V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

isc Silicon NPN Power Transistor 2SD1037DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1031DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier app

isc Silicon NPN Power Transistors 2SD103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CComplement to Type 2SB503Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier, power switching, DC-DCconverter and regulator appl

isc Silicon NPN Power Transistor 2SD1032DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SB812Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1038DESCRIPTIONHigh Current CapabilityFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications in militaryand industrial equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME