2SD104 Todos los transistores

 0.1. Size:185K  st
 2sd1047.pdf

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line

 0.2. Size:239K  sanyo
 2sb815 2sd1048.pdf

Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9

 0.3. Size:30K  sanyo
 2sb817p 2sd1047p 2sd1047p.pdf

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P

 0.4. Size:21K  sanyo
 2sd1048.pdf

Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9

 0.5. Size:125K  sanyo
 2sd1047 2sd1047e.pdf

Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast re

 0.6. Size:115K  sanyo
 2sd1046.pdf

Ordering number 677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance

 0.7. Size:190K  onsemi
 2sb815 2sd1048.pdf

Ordering number EN694H 2SB815/2SD1048 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 15V, 0.7A, Low VCE sat , PNP NPN Single CP Features Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage ( ) 2SB815 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Col

 0.8. Size:102K  fuji
 2sd1049.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 0.9. Size:115K  jmnic
 2sd1049.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 DESCRIPTION With TO-3PN package High current, High speed switching High reliability APPLICATIONS Switching regulators Motor controls High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emi

 0.10. Size:445K  sanken-ele
 2sb817c 2sd1047c.pdf

Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

 0.11. Size:705K  kexin
 2sd1048.pdf

SMD Type Transistors NPN Transistors 2SD1048 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SB815 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

 0.12. Size:178K  cn sptech
 2sd1047d 2sd1047e.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.13. Size:219K  inchange semiconductor
 2sd1044.pdf

isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MA

 0.14. Size:206K  inchange semiconductor
 2sd1047e.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency a

 0.15. Size:213K  inchange semiconductor
 2sd1049.pdf

isc Silicon NPN Power Transistor 2SD1049 DESCRIPTION High Current Capability Fast Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls High frequency inverters General purpose power amplifiers Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

 0.16. Size:196K  inchange semiconductor
 2sd1040.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1040 DESCRIPTION High Current Capability Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial application

 0.17. Size:221K  inchange semiconductor
 2sd1046.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1046 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB816 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For LF power amplifier, 50W output

 0.18. Size:360K  inchange semiconductor
 2sd1047-247.pdf

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage ap

 0.19. Size:218K  inchange semiconductor
 2sd1047.pdf

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage a