2SD1056 Todos los transistores

 

2SD1056 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1056
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 400 W
   Tensión colector-base (Vcb): 600 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SPECIAL
 

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2SD1056 datasheet

 8.1. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

2SD1056

 8.2. Size:113K  toshiba
 2sd1052a.pdf pdf_icon

2SD1056

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:124K  rohm
 2sd1055 2sd1766.pdf pdf_icon

2SD1056

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 /

 8.4. Size:44K  panasonic
 2sd1051 e.pdf pdf_icon

2SD1056

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5

MOSTRAR MÁS

Otros transistores... 2SD105 , 2SD1050 , 2SD1051 , 2SD1052 , 2SD1052A , 2SD1053 , 2SD1054 , 2SD1055 , TIP122 , 2SD1059 , 2SD1060 , 2SD1060Q , 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q , 2SD1061R .

 

 
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