2SD1056 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1056
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 400 W
Tensión colector-base (Vcb): 600 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 50 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SPECIAL
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2SD1056 Datasheet (PDF)
2sd1052a.pdf

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2sd1055 2sd1766.pdf

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /
2sd1051 e.pdf

Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KSR2109 | BSYP62 | L2SA812SLT3G | FB1L2Q | GES3250A | 2N2114 | D38L6
History: KSR2109 | BSYP62 | L2SA812SLT3G | FB1L2Q | GES3250A | 2N2114 | D38L6



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