2SD1060S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1060S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 100
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD1060S
2SD1060S
Datasheet (PDF)
..1. Size:174K cn sptech
2sd1060q 2sd1060r 2sd1060s.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application
7.1. Size:55K sanyo
2sd1060.pdf
Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,
7.2. Size:192K onsemi
2sd1060.pdf
Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete
7.3. Size:265K utc
2sd1060.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6
7.4. Size:128K jmnic
2sd1060.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
7.5. Size:214K inchange semiconductor
2sd1060.pdf
isc Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,
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