2SD1079 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1079
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SD1079
2SD1079 Datasheet (PDF)
2sd1073.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1071.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1073.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting ba
2sd1072.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1072DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T
2sd1071.pdf
isc Silicon NPN Darlington Power Transistor 2SD1071DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay & solenoid driversMotor controlsGeneral purpose power amplifiersIncluding zener diodeABSOLUTE MAXIMUM
2sd1070.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1070DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CD3872
History: CD3872
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050