2SD1081L Todos los transistores

 

2SD1081L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1081L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 150

Encapsulados: TO218

 Búsqueda de reemplazo de 2SD1081L

- Selecciónⓘ de transistores por parámetros

 

2SD1081L datasheet

 8.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD1081L

A A A

 8.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD1081L

 8.3. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD1081L

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION High DC current gain- h = 2000 (Min) @ I = 1A FE C Collector-Emitter Sustaining Voltage- V =80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Hammer drivers Series and shunt regulator Audio amplifi

 8.4. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD1081L

isc Silicon NPN Darlington Power Transistor 2SD1088 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) High DC Current Gain- h = 2000(Min.)@I = 2A FE C Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hig

MOSTRAR MÁS

Otros transistores... 2SD1077S , 2SD1078 , 2SD1079 , 2SD108 , 2SD1080 , 2SD1080L , 2SD1080S , 2SD1081 , D880 , 2SD1081S , 2SD1082 , 2SD1083 , 2SD1083L , 2SD1083S , 2SD1084 , 2SD1085 , 2SD1085K .

History: 2SD1077S | 2N708 | 2SD1080 | 2SB1404 | 2SA1591

 

 

 

 

↑ Back to Top
.