2SD110 Todos los transistores

 

2SD110 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD110

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 110 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2SD110 datasheet

 ..1. Size:213K  inchange semiconductor
2sd110.pdf pdf_icon

2SD110

isc Silicon NPN Power Transistor 2SD110 DESCRIPTIONV High Power Dissipation- P = 100W@T = 25 C C High Current Capability- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 0.1. Size:24K  hitachi
2sd1101.pdf pdf_icon

2SD110

2SD1101 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SB831 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak

 0.2. Size:326K  kexin
2sd1101.pdf pdf_icon

2SD110

SMD Type Transistors NPN Transistors 2SD1101 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.7A 1 2 Collector Emitter Voltage VCEO=20V +0.1 0.95-0.1 0.1+0.05 -0.01 Complement to 2SB831 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

 0.3. Size:207K  inchange semiconductor
2sd1105.pdf pdf_icon

2SD110

isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Power and High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Otros transistores... 2SD1093 , 2SD1094 , 2SD1095 , 2SD1096 , 2SD1097 , 2SD1098 , 2SD1099 , 2SD11 , S9018 , 2SD1100 , 2SD1101 , 2SD1101A , 2SD1101B , 2SD1101C , 2SD1102 , 2SD1103 , 2SD1104 .

 

 

 


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