2SD1100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1101 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SB831 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak

SMD Type Transistors NPN Transistors 2SD1101 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.7A 1 2 Collector Emitter Voltage VCEO=20V +0.1 0.95-0.1 0.1+0.05 -0.01 Complement to 2SB831 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

isc Silicon NPN Power Transistor 2SD110 DESCRIPTIONV High Power Dissipation- P = 100W@T = 25 C C High Current Capability- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Power and High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER