2SD1100 Todos los transistores

 

2SD1100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1100

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 20 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 400

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD1100

 

2SD1100 Datasheet (PDF)

4.1. 2sd1101.pdf Size:24K _hitachi

2SD1100
2SD1100

2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak

4.2. 2sd1101.pdf Size:326K _kexin

2SD1100

SMD Type Transistors NPN Transistors 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=0.7A 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 0.95-0.1 0.1+0.05 -0.01 ● Complement to 2SB831 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base

 5.1. 2sd1187.pdf Size:227K _toshiba

2SD1100
2SD1100



5.2. 2sd1140.pdf Size:158K _toshiba

2SD1100
2SD1100

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (

 5.3. 2sd1160.pdf Size:219K _toshiba

2SD1100
2SD1100

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications • High DC current gain • Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B • Built-in free wheel diode Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

5.4. 2sd1191.pdf Size:142K _sanyo

2SD1100
2SD1100

Ordering number:925E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB881/2SD1191 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2010C [2SB881/2SD1191] Features · High DC current gain. · High current capacity and wide ASO. · Low saturaion voltage. JEDEC : TO-220AB 1

 5.5. 2sd1159.pdf Size:77K _sanyo

2SD1100
2SD1100

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions · Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.

5.6. 2sd1192.pdf Size:132K _sanyo

2SD1100
2SD1100

Ordering number:926C PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB882/2SD1192 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2010C [2SB882/2SD1192] Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. JEDEC : TO-220AB 1

5.7. 2sd1153.pdf Size:83K _sanyo

2SD1100
2SD1100

Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2006A [2SB865/2SD1153] Features · High DC current gain (4000 or more). · Large current capacity and wide ASO. · Low saturation voltage. EIAJ : SC-51 B : Base

5.8. 2sd1193.pdf Size:134K _sanyo

2SD1100
2SD1100

Ordering number:1036B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB883/2SD1193 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2022A [2SB883/2SD1193] Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 1 : Base 2 : Colle

5.9. 2sd1145.pdf Size:89K _sanyo

2SD1100
2SD1100

Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, strobe unit:mm DC-DC converters, motor drivers. 2006B [2SD1145] 6.0 Features 5.0 4.7 · Low saturation voltage. · Large current capacity and wide ASO. 0.5 0.6 0.5 0.5 1 : Emitter 2 : Collecto

5.10. 2sd1195.pdf Size:148K _sanyo

2SD1100
2SD1100

Ordering number:927E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2010C [2SB885/2SD1195] Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. JEDEC : TO-220AB 1 :

5.11. 2sd1111.pdf Size:71K _sanyo

2SD1100
2SD1100

Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2003B [2SD1111] 5.0 Features 4.0 4.0 · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (VCE(

5.12. 2sb883 2sd1193.pdf Size:118K _sanyo

2SD1100
2SD1100



5.13. 2sd1197.pdf Size:134K _sanyo

2SD1100
2SD1100

Ordering number:1079A PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB887/2SD1197 Driver Applications Features Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2022A [2SB887/2SD1197] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. 1 : Base 2 : Collecto

5.14. 2sd1194.pdf Size:137K _sanyo

2SD1100
2SD1100

Ordering number:1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2010C [2SB884/2SD1194] Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. JEDEC : TO-220AB 1

5.15. 2sd1196.pdf Size:139K _sanyo

2SD1100
2SD1100

Ordering number:928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2010C [2SB886/2SD1196] Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. JEDEC : TO-220AB 1 :

5.16. 2sd1190.pdf Size:143K _sanyo

2SD1100
2SD1100

Ordering number:924E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB880/2SD1190 For Various Drivers Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulators. 2010C [2SB880/2SD1190] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. JEDEC : TO-2

5.17. 2sd1163.pdf Size:40K _renesas

2SD1100
2SD1100

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

5.18. 2sd1164.pdf Size:228K _nec

2SD1100
2SD1100



5.19. 2sd1189.pdf Size:135K _rohm

2SD1100



5.20. 2sd1149.pdf Size:39K _panasonic

2SD1100
2SD1100

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

5.21. 2sd1149 e.pdf Size:43K _panasonic

2SD1100
2SD1100

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

5.22. 2sd1119.pdf Size:38K _panasonic

2SD1100
2SD1100

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45° low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4± 0.08 automatic insertion thr

5.23. 2sd1199 e.pdf Size:43K _panasonic

2SD1100
2SD1100

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon

5.24. 2sd1198.pdf Size:51K _panasonic

2SD1100
2SD1100

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin

5.25. 2sd1199.pdf Size:39K _panasonic

2SD1100
2SD1100

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon

5.26. 2sd1119 e.pdf Size:42K _panasonic

2SD1100
2SD1100

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45° low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4± 0.08 automatic insertion thr

5.27. 2sd1198 e.pdf Size:56K _panasonic

2SD1100
2SD1100

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin

5.28. 2sd1157.pdf Size:97K _fuji

2SD1100
2SD1100

 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.29. 2sd1118.pdf Size:100K _fuji

2SD1100
2SD1100

 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.30. 2sd1158.pdf Size:126K _fuji

2SD1100
2SD1100



5.31. 2sd1133 2sd1134.pdf Size:32K _hitachi

2SD1100
2SD1100

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE

5.32. 2sd1135.pdf Size:42K _hitachi

2SD1100
2SD1100

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

5.33. 2sd1133 2sd1134.pdf Size:43K _hitachi

2SD1100
2SD1100

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

5.34. 2sd1138.pdf Size:31K _hitachi

2SD1100
2SD1100

2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 2SD1138 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to bas

5.35. 2sd1127.pdf Size:282K _hitachi

2SD1100
2SD1100



5.36. 2sd1137.pdf Size:31K _hitachi

2SD1100
2SD1100

 2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4V Coll

5.37. 2sd1126.pdf Size:33K _hitachi

2SD1100
2SD1100

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 kΩ 130 Ω 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC

5.38. 2sd1113.pdf Size:32K _hitachi

2SD1100
2SD1100

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6 kΩ 450 Ω 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7V Collector current IC 6A Collector peak current

5.39. 2sd1162.pdf Size:36K _no

2SD1100



5.40. 2sd1185.pdf Size:56K _no

2SD1100



5.41. 2sd1169.pdf Size:37K _no

2SD1100



5.42. 2sd113.pdf Size:51K _no

2SD1100



5.43. 2sd1175.pdf Size:69K _wingshing

2SD1100

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

5.44. 2sd1168.pdf Size:69K _wingshing

2SD1100

NPN TRIPLE DIFFUSED 2SD1168 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

5.45. 2sd1148.pdf Size:48K _wingshing

2SD1100

2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

5.46. 2sd1128.pdf Size:65K _wingshing

2SD1100

2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25℃ PC 30 W ℃ ℃ ℃ Junction Temperature Tj 150

5.47. 2sd1193.pdf Size:73K _jmnic

2SD1100
2SD1100

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB883 ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to

5.48. 2sd1197.pdf Size:126K _jmnic

2SD1100
2SD1100

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 DESCRIPTION ·With TO-3PN package ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. APPLICATIONS ·Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

5.49. 2sd1196.pdf Size:110K _jmnic

2SD1100
2SD1100

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 DESCRIPTION ·With TO-220 package ·High DC current gain. ·High current capacity and wide ASO. ·Low saturation voltage. APPLICATIONS ·Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit

5.50. 2sd1119.pdf Size:510K _htsemi

2SD1100
2SD1100

 2SD1119 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage

5.51. 2sd1119.pdf Size:187K _lge

2SD1100
2SD1100

 2SD1119 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 voltage power supply. 3.0 Dimensions in inches a

5.52. st2sd1163a.pdf Size:476K _semtech

2SD1100
2SD1100

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge

5.53. 2sd1164.pdf Size:1663K _kexin

2SD1100
2SD1100

SMD Type Transistors NPN Darlington Transistors 2SD1164 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features 4 ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=60V 0.127 0.80+0.1 max -0.1 1 Base + 0.1 2.3 0.60- 0.1 2 Collector +0.15 3 Emitter 4.60 -0.15 4 Collector ■ Absolute Maximum Ratings Ta = 25℃

5.54. 2sd1149.pdf Size:604K _kexin

2SD1100
2SD1100

SMD Type Transistors NPN Transistors 2SD1149 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=100V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

5.55. 2sd1119.pdf Size:299K _kexin

2SD1100

SMD Type Transistors NPN Transistors 2SD1119 1.70 0.1 ■ Features ● Collector Current Capability IC=3 A ● Collector Emitter Voltage VCEO=25 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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