2SD1120O
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1120O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Capacitancia de salida (Cc): 20
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO251
Búsqueda de reemplazo de transistor bipolar 2SD1120O
2SD1120O
Datasheet (PDF)
8.2. Size:33K hitachi
2sd1126.pdf
2SD1126(K)Silicon NPN Triple DiffusedApplicationPower switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.5 k 130 23(Typ) (Typ)32SD1126(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC
8.3. Size:65K wingshing
2sd1128.pdf
2SD1128 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSTO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150
8.4. Size:208K inchange semiconductor
2sd1127.pdf
isc Silicon NPN Darlington Power Transistor 2SD1127DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)
8.5. Size:193K inchange semiconductor
2sd1124.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1124DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswi
8.6. Size:187K inchange semiconductor
2sd1128.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1128DESCRIPTIONExcellent linearity in hFEHigh DC Current GainHigh ReliabilityExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor & B/W TV powersupply Active power filterIndustrial use power supply (series regul
8.7. Size:209K inchange semiconductor
2sd1126.pdf
isc Silicon NPN Darlington Power Transistor 2SD1126DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.