2SD113 Todos los transistores

 ..1. Size:51K  no
 2sd113.pdf

 ..2. Size:214K  inchange semiconductor
 2sd113.pdf

isc Silicon NPN Power Transistor 2SD113 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RAT

 0.1. Size:31K  hitachi
 2sd1137.pdf

2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4V Coll

 0.2. Size:31K  hitachi
 2sd1138.pdf

2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 2SD1138 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to bas

 0.3. Size:42K  hitachi
 2sd1135.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.4. Size:43K  hitachi
 2sd1133 2sd1134.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.5. Size:32K  hitachi
 2sd1133 2sd1134.pdf

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE

 0.6. Size:193K  inchange semiconductor
 2sd1139.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1139 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications

 0.7. Size:213K  inchange semiconductor
 2sd1133.pdf

isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI

 0.8. Size:207K  inchange semiconductor
 2sd1136.pdf

isc Silicon NPN Power Transistor 2SD1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.9. Size:207K  inchange semiconductor
 2sd1137.pdf

isc Silicon NPN Power Transistor 2SD1137 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB860 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA

 0.10. Size:212K  inchange semiconductor
 2sd1138.pdf

isc Silicon NPN Power Transistor 2SD1138 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB861 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA

 0.11. Size:213K  inchange semiconductor
 2sd1135.pdf

isc Silicon NPN Power Transistor 2SD1135 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 2.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB859 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI

 0.12. Size:213K  inchange semiconductor
 2sd1134.pdf

isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI