2SD1133B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SD1133, 2SD1134Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB857 and 2SB858OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1133 2SD1134 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage VE

isc Silicon NPN Power Transistor 2SD1133DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI