2SD1139 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1139DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applications

2SD1137Silicon NPN Triple DiffusedApplicationLow frequency power amplifier TV vertical deflection output complementary pair with 2SB860OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 4VColl

2SD1138Silicon NPN Triple DiffusedApplicationLow frequency high voltage power amplifier TV vertical deflection output complementary pair with2SB861OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter232SD1138Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 150 VEmitter to bas

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SD1133, 2SD1134Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB857 and 2SB858OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1133 2SD1134 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base voltage VE

isc Silicon NPN Power Transistor 2SD1133DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching and TV horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1137DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB860Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD113DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SD1138DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB861Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD1135DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 2.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB859Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1134DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB858Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI