2SD1147 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1147
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 11 MHz
Capacitancia de salida (Cc): 54 pF
Ganancia de corriente contínua (hfe): 6000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD1147
2SD1147 Datasheet (PDF)
2sd1140.pdf
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2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (
2sd1145.pdf
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Ordering number:EN784ENPN Epitaxial Planar Silicon Transistor2SD1145High-Current Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, strobeunit:mmDC-DC converters, motor drivers.2006B[2SD1145]6.0Features 5.0 4.7 Low saturation voltage. Large current capacity and wide ASO.0.50.60.5 0.51 : Emitter2 : Collecto
2sd1149.pdf
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Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug
2sd1149 e.pdf
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Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug
2sd1148.pdf
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2SD1148 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A
2sd1149.pdf
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SMD Type TransistorsNPN Transistors2SD1149SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=100V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle
2sd1141.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1141DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sd1142.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1142DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.AB
2sd114.pdf
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isc Silicon NPN Power Transistor 2SD114DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sd1148.pdf
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isc Silicon NPN Power Transistor 2SD1148DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB863Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applications
2sd1143.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1143DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .