2SD1148R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1148 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

isc Silicon NPN Power Transistor 2SD1148DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB863Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applications

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

Ordering number:EN784ENPN Epitaxial Planar Silicon Transistor2SD1145High-Current Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, strobeunit:mmDC-DC converters, motor drivers.2006B[2SD1145]6.0Features 5.0 4.7 Low saturation voltage. Large current capacity and wide ASO.0.50.60.5 0.51 : Emitter2 : Collecto

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

SMD Type TransistorsNPN Transistors2SD1149SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=100V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

isc Silicon NPN Darlington Power Transistor 2SD1141DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1142DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.AB

isc Silicon NPN Power Transistor 2SD114DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1143DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSO