2SD1152
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1152
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 55
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SD1152
2SD1152
Datasheet (PDF)
8.1. Size:83K sanyo
2sd1153.pdf 
Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base
8.2. Size:77K sanyo
2sd1159.pdf
Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.
8.3. Size:97K fuji
2sd1157.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.5. Size:209K inchange semiconductor
2sd1157.pdf
isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
8.6. Size:207K inchange semiconductor
2sd1159.pdf
isc Silicon NPN Power Transistor 2SD1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output, high-currentswitching applications.ABSOLUTE
8.7. Size:209K inchange semiconductor
2sd1158.pdf
isc Silicon NPN Power Transistor 2SD1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatiAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
8.8. Size:207K inchange semiconductor
2sd1154.pdf
isc Silicon NPN Power Transistor 2SD1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output for B/W TV set.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
