2SD1154 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output for B/W TV set.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base

Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base

Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

isc Silicon NPN Power Transistor 2SD1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output, high-currentswitching applications.ABSOLUTE

isc Silicon NPN Power Transistor 2SD1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatiAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay