2SD1161P6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

NPN TRIPLE DIFFUSED2SD1168 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO 150 VCollector Emitter Voltage VCEO 6 VEmitter Base Voltage VEBO 7 ACollector Current IC 10 ACollector Peak Current ICP 20 ACollector Surge

SMD Type TransistorsNPN Darlington Transistors2SD1164TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V0.1270.80+0.1 max-0.11 Base+ 0.12.3 0.60- 0.12 Collector+0.153 Emitter4.60 -0.154 Collector Absolute Maximum Ratings Ta = 25

isc Silicon NPN Power Transistor 2SD1168DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Darlington Power Transistor 2SD1162DESCRIPTIONHigh DC Current Gain-: h = 400(Min.)@I = 2AFE CHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, low speed switching industrialuse.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS TV horizontal deflection output, PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD1

isc Silicon NPN Power Transistor 2SD1163ADESCRIPTIONCollector Current: I = 7ACCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1163DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol