2SD1163A. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1163A datasheet

..1. Size:119K inchange semiconductor
2sd1163 2sd1163a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS TV horizontal deflection output, PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD1

..2. Size:206K inchange semiconductor
2sd1163a.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1163A DESCRIPTION Collector Current I = 7A C Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

0.1. Size:476K semtech
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ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge

7.1. Size:40K renesas
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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM