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2SD1168 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1168

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1500 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD1168

 

2SD1168 Datasheet (PDF)

1.1. 2sd1168.pdf Size:69K _wingshing

2SD1168

NPN TRIPLE DIFFUSED 2SD1168 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (D

1.2. 2sd1168.pdf Size:137K _inchange_semiconductor

2SD1168
2SD1168

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1168 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PA

 4.1. 2sd1160.pdf Size:219K _toshiba

2SD1168
2SD1168

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications • High DC current gain • Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B • Built-in free wheel diode Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

4.2. 2sd1163.pdf Size:40K _renesas

2SD1168
2SD1168

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

 4.3. 2sd1164.pdf Size:228K _nec

2SD1168
2SD1168

4.4. 2sd1162.pdf Size:36K _no

2SD1168

 4.5. 2sd1169.pdf Size:37K _no

2SD1168

4.6. 2sd1162.pdf Size:142K _inchange_semiconductor

2SD1168
2SD1168

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

4.7. 2sd1163 2sd1163a.pdf Size:119K _inchange_semiconductor

2SD1168
2SD1168

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO TOR NDU

4.8. 2sd1163.pdf Size:123K _inchange_semiconductor

2SD1168
2SD1168

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Vo

4.9. st2sd1163a.pdf Size:476K _semtech

2SD1168
2SD1168

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge

4.10. 2sd1164.pdf Size:1663K _kexin

2SD1168
2SD1168

SMD Type Transistors NPN Darlington Transistors 2SD1164 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features 4 ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=60V 0.127 0.80+0.1 max -0.1 1 Base + 0.1 2.3 0.60- 0.1 2 Collector +0.15 3 Emitter 4.60 -0.15 4 Collector ■ Absolute Maximum Ratings Ta = 25℃

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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