2SD1178 Todos los transistores

 

2SD1178 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1178

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 230 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO126

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2SD1178 datasheet

 8.1. Size:69K  wingshing
 2sd1175.pdf pdf_icon

2SD1178

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

 8.2. Size:196K  inchange semiconductor
 2sd1170.pdf pdf_icon

2SD1178

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic

 8.3. Size:198K  inchange semiconductor
 2sd1175.pdf pdf_icon

2SD1178

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

 8.4. Size:234K  inchange semiconductor
 2sd1172.pdf pdf_icon

2SD1178

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1172 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

MOSTRAR MÁS

Otros transistores... 2SD1173 , 2SD1174 , 2SD1175 , 2SD1176 , 2SD1176A , 2SD1177 , 2SD1177B , 2SD1177C , 2N5401 , 2SD1179 , 2SD118 , 2SD1180 , 2SD1181 , 2SD1182 , 2SD1183 , 2SD1184 , 2SD1185 .

History: BC416C | 2SD215F | KT603D | 2SC4746 | FTD1304 | MP1556 | BC417VI

 

 

 

 

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