2SD1202 Datasheet. Equivalente

 ..1. Size:183K  inchange semiconductor
 2sd1202.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE

 8.1. Size:51K  1
 2sd1205a.pdf

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

 8.2. Size:86K  1
 2sd1206.pdf

 8.3. Size:51K  sanyo
 2sd1207.pdf

Ordering number EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and

 8.4. Size:42K  rohm
 2sd1200.pdf

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

 8.5. Size:56K  panasonic
 2sd1205 e.pdf

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

 8.6. Size:51K  panasonic
 2sd1205.pdf

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

 8.7. Size:31K  hitachi
 2sd1209.pdf

2SD1209(K) Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Co

 8.8. Size:942K  blue-rocket-elect
 2sd1207.pdf

2SD1207 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features , Low saturation voltage, large current capacity. / Applications , , Power supplies, relay drivers, lamp

 8.9. Size:185K  inchange semiconductor
 2sd1204.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1204 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE

 8.10. Size:114K  inchange semiconductor
 2sd1208.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings (Ta=25 ) SY