2SD1203 Todos los transistores

 

2SD1203 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1203

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO3

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2SD1203 Datasheet (PDF)

4.1. 2sd1207.pdf Size:51K _sanyo

2SD1203
2SD1203

Ordering number : EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and wide ASO.

4.2. 2sd1200.pdf Size:42K _rohm

2SD1203

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

 4.3. 2sd1205.pdf Size:51K _panasonic

2SD1203
2SD1203

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package allowing

4.4. 2sd1205 e.pdf Size:56K _panasonic

2SD1203
2SD1203

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package allowing

 4.5. 2sd1209.pdf Size:31K _hitachi

2SD1203
2SD1203

2SD1209(K) Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector

4.6. 2sd1208.pdf Size:114K _inchange_semiconductor

2SD1203
2SD1203

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation Ў¤ High DC current gain Ў¤ Darlington APPLICATIONS Ў¤ Power regulator for line operated TV PINNING PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER

Otros transistores... 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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