2SD1212R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number 990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general large-current switching 2010C applications. [2SB903/2SD1212] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.

isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION High Collector Current I = 12A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 5A CE(sat) C Complement to Type 2SB903 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switc

Ordering number 1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB904/2SD1213] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base Collector;connect

isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABS

isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION High Collector Current I = 20A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 8A CE(sat) C Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters,converters applications