2SD1213Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1213Q

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO247

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2SD1213Q datasheet

 7.1. Size:116K  sanyo
 2sd1213.pdf pdf_icon

2SD1213Q

Ordering number 1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB904/2SD1213] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current

 7.2. Size:87K  jmnic
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2SD1213Q

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base Collector;connect

 7.3. Size:218K  inchange semiconductor
 2sd1213.pdf pdf_icon

2SD1213Q

isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION High Collector Current I = 20A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 8A CE(sat) C Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters,converters applications

MOSTRAR MÁS

Otros transistores... 2SD121, 2SD1210, 2SD1211, 2SD1212, 2SD1212Q, 2SD1212R, 2SD1212S, 2SD1213, 2SB817, 2SD1213R, 2SD1213S, 2SD1214, 2SD1215, 2SD1216, 2SD1217, 2SD1218, 2SD1219