2SD1213Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1213Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO247
Búsqueda de reemplazo de transistor bipolar 2SD1213Q
2SD1213Q Datasheet (PDF)
2sd1213.pdf
Ordering number:1022APNP/NPN Epitaxial Planar Silicon Transistors2SB904/2SD121330V/12A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2022A[2SB904/2SD1213]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current
2sd1213.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION1 Base Collector;connect
2sd1213.pdf
isc Silicon NPN Power Transistor 2SD1213DESCRIPTIONHigh Collector Current:: I = 20ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 8ACE(sat) CComplement to Type 2SB904Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters,converters applications
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
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