2SD1235Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1235Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 120 MHz
Ganancia de corriente contínua (hfe): 70
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de transistor bipolar 2SD1235Q
2SD1235Q Datasheet (PDF)
3.1. 2sd1235.pdf 
Size:117K _sanyo
Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit:mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current capacity
3.2. 2sd1235.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1235 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB919 ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3
4.1. 2sd1238l.pdf Size:104K _sanyo
Ordering number:1798A PNP/NPN Epitaxial Planar Silicon Transistors 2SB922L/2SD1238L 80V/12A Switching Applications Applications Package Dimensions Suittable for relay drivers, high-speed inverters, unit:mm converters, and other large-current switching appli- 2022A cations. [2SB922L/2SD1238L] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN)
4.2. 2sd1237l.pdf Size:142K _sanyo
Ordering number:1797B PNP/NPN Epitaxial Planar Silicon Transistors 2SB921L/2SD1237L 80V/7A Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit:mm converters, and other genral large current switching 2010C applications. [2SB921L/2SD1237L] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (N
4.3. 2sd1236.pdf Size:126K _sanyo
4.4. 2sd1230.pdf Size:151K _sanyo
Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2022A [2SB913/2SD1230] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 : Base 2 : Collector 3
4.5. 2sd1237.pdf Size:120K _sanyo
4.6. 2sd1236l.pdf Size:148K _sanyo
Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. H
4.7. 2sd1238l.pdf Size:197K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1238L DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SB922L APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other large- current switching applications PINNING PIN DESCRIPTION 1 Base Collec
4.8. 2sd1237l.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1237L DESCRIPTION · ·With TO-220C package ·Complement to type 2SB921L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. PINNING PIN DESCRIPTION 1 Base
4.9. 2sd1230.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applica
4.10. 2sd1233.pdf Size:231K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATI
4.11. 2sd1236l.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1236L DESCRIPTION · ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters, converters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;conne
Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .
