2SD1236LS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1236LS
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Ganancia de corriente contínua (hFE): 140
Encapsulados: TO220
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2SD1236LS datasheet
2sd1236l.pdf
Ordering number 1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max
2sd1236l.pdf
isc Silicon NPN Power Transistors 2SD1236L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB920L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic
2sd1236.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1236 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-curren
Otros transistores... 2SD1233, 2SD1234, 2SD1235, 2SD1235Q, 2SD1235S, 2SD1236, 2SD1236L, 2SD1236LR, BC547, 2SD1237, 2SD1237L, 2SD1237LR, 2SD1237LS, 2SD1238, 2SD1238L, 2SD1238LQ, 2SD1238LR
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