2SD124 Todos los transistores

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2SD124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD124

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.2 MHz

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD124

 

2SD124 Datasheet (PDF)

1.1. 2sd1247.pdf Size:88K _sanyo

2SD124
2SD124

Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) : 2SB927 EIAJ : SC-

1.2. 2sd1246.pdf Size:85K _sanyo

2SD124
2SD124

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC : TO-92 B : Base

1.3. 2sd1244.pdf Size:40K _panasonic

2SD124
2SD124

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

1.4. 2sd1244 e.pdf Size:44K _panasonic

2SD124
2SD124

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

1.5. 2sd1243.pdf Size:88K _inchange_semiconductor

2SD124
2SD124

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1243 DESCRIPTION ·With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum r

1.6. 2sd1248.pdf Size:260K _inchange_semiconductor

2SD124
2SD124

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

Otros transistores... 2SD1237LR , 2SD1237LS , 2SD1238 , 2SD1238L , 2SD1238LQ , 2SD1238LR , 2SD1238LS , 2SD1239 , D882 , 2SD1240 , 2SD1241 , 2SD1241A , 2SD1242 , 2SD1242A , 2SD1243 , 2SD1243A , 2SD1244 .

 


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