2SD1246S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1246S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz
Capacitancia de salida (Cc): 19 pF
Ganancia de corriente contínua (hfe): 140
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1246S
2SD1246S Datasheet (PDF)
3.1. 2sd1246.pdf 
Size:85K _sanyo
Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2003A [2SB926/2SD1246] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. JEDEC : TO-92 B
4.1. 2sd1247.pdf Size:88K _sanyo
Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB927/2SD1247] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB927 EIA
4.2. 2sd1244.pdf Size:40K _panasonic
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone
4.3. 2sd1244 e.pdf Size:44K _panasonic
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone
4.4. 2sd1241.pdf Size:191K _inchange_semiconductor
isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie
4.5. 2sd1245.pdf Size:208K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·High DC Current Gain : h = 500(Min) @I = 2A FE C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL
4.6. 2sd1242.pdf Size:191K _inchange_semiconductor
isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie
4.7. 2sd1243.pdf Size:191K _inchange_semiconductor
isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie
4.8. 2sd1248.pdf Size:210K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·High DC Current Gain : h = 1000(Min) @I = 4A FE C ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAX
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
