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2SD1246S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1246S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 19 pF

Ganancia de corriente contínua (hfe): 140

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD1246S

 

2SD1246S Datasheet (PDF)

3.1. 2sd1246.pdf Size:85K _sanyo

2SD1246S
2SD1246S

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2003A [2SB926/2SD1246] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. JEDEC : TO-92 B

4.1. 2sd1247.pdf Size:88K _sanyo

2SD1246S
2SD1246S

Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions · Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB927/2SD1247] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB927 EIA

4.2. 2sd1244.pdf Size:40K _panasonic

2SD1246S
2SD1246S

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone

 4.3. 2sd1244 e.pdf Size:44K _panasonic

2SD1246S
2SD1246S

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone

4.4. 2sd1241.pdf Size:191K _inchange_semiconductor

2SD1246S
2SD1246S

isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie

 4.5. 2sd1245.pdf Size:208K _inchange_semiconductor

2SD1246S
2SD1246S

isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·High DC Current Gain : h = 500(Min) @I = 2A FE C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL

4.6. 2sd1242.pdf Size:191K _inchange_semiconductor

2SD1246S
2SD1246S

isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie

4.7. 2sd1243.pdf Size:191K _inchange_semiconductor

2SD1246S
2SD1246S

isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min) (BR)CEO ·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifie

4.8. 2sd1248.pdf Size:210K _inchange_semiconductor

2SD1246S
2SD1246S

isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·High DC Current Gain : h = 1000(Min) @I = 4A FE C ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAX

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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