2SD1258 Todos los transistores

Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin

Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB933 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold

Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB931 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold

Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features High foward current transfer ratio hFE 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to 0.8

Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB929 and 2SB929A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the

Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features Wide area of safe operation (ASO) 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.8 0.1 0.5max. Absolute Maximum Ratings (T

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB930 and 2SB930A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the

Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit mm For power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB934 Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.8 0.1 0.5max. N type package enabling direct solder

SMD Type Transistors NPN Transistors 2SD1256 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max Complementary to 2SB933 + 0.1 1 Base 2.3 0.60- 0.1 +0.1

SMD Type Transistors NPN Transistors 2SD1253A TO-252 Unit mm +0.15 Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Complementary to 2SB930A 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

SMD Type Transistors NPN Transistors 2SD1255 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Large collector current IC 0.80-0.1 max Complementary to 2SB932 + 0.1 1 Base 2.3

SMD Type Transistors NPN Transistors 2SD1254 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 0.80-0.1 Large collector current IC max Complementary to 2SB931 + 0.1 1 Base 2.3 0

SMD Type Transistors NPN Transistors 2SD1257A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3

SMD Type Transistors NPN Transistors 2SD1250 TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Co

SMD Type Transistors NPN Transistors 2SD1250A TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 C

SMD Type Transistors NPN Transistors 2SD1252 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max Complementary to 2SB929 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2

SMD Type Transistors NPN Transistors 2SD1252A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max Complementary to 2SB929A + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15

SMD Type Transistors NPN Transistors 2SD1253 TO-252 Unit mm +0.15 Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Complementary to 2SB930 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co

SMD Type Transistors NPN Transistors 2SD1257 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 Complementary to 2SB934 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15

isc Silicon NPN Power Transistor 2SD1255 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching regulators ABSOLUT