2SD1260A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1260, 2SD1260ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB937 and 2SB937AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switchingN type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circui

Power Transistors2SD1269Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94410.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1268Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1264, 2SD1264ASilicon NPN triple diffusion planar typeFor low-freauency power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SB940 and 2SB940A5.5 0.2 2.7 0.2Features 3.1 0.1High collector to emitter VCEOLarge collector power dissipation PCFull-pack package which can be installed to the heat sink w

Power Transistors2SD1262, 2SD1262ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB939 and 2SB939AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switching0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin tothe printe

Power Transistors2SD1261, 2SD1261ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB938 and 2SB938AFeatures High foward current transfer ratio hFE High-speed switching1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed cir

Power Transistors2SD1266, 2SD1266ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB941 and 2SB941AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink with

Power Transistors2SD1267, 2SD1267ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB942 and 2SB942AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with

Power Transistors2SD1263, 2SD1263ASilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures10.0 0.2 4.2 0.2High collector to base voltage VCBO5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screw 3.1 0.1Absolute Maximum Ratings (TC=25C)Parameter Symbol Ratings UnitCollector to 2SD1263 3501.3 0.2

2SD1265 NPN EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIERVERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Tempera

isc Silicon NPN Power Transistor 2SD1269DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB944Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1266ADESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE

isc Silicon NPN Power Transistor 2SD1265DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION With TO-220Fa package Complement to type 2SB940/940A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collecto

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB942/942A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolut

isc Silicon NPN Power Transistor 2SD1268DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon NPN Power Transistor 2SD1264DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 150V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SB940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB941/941A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified o

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION With TO-220Fa package High breakdown voltalge APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For audio frequency power applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(T

isc Silicon NPN Power Transistor 2SD1266DESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1267DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1263DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 250V(Min)(BR)CEOHigh Collector Power Dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY