2SD1262A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB939 and 2SB939A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to the printe

Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB944 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB943 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification Unit mm For TV vertical deflection output 10.0 0.2 4.2 0.2 Complementary to 2SB940 and 2SB940A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink w

Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB938 and 2SB938A Features High foward current transfer ratio hFE High-speed switching 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed cir

Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB937 and 2SB937A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circui

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit mm Features 10.0 0.2 4.2 0.2 High collector to base voltage VCBO 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Ratings Unit Collector to 2SD1263 350 1.3 0.2

2SD1265 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Tempera

isc Silicon NPN Power Transistor 2SD1269 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB944 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1266A DESCRIPTION Low Collector Saturation Voltage V = 1.2V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB941A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE

isc Silicon NPN Power Transistor 2SD1265 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION With TO-220Fa package Complement to type 2SB940/940A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collecto

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB942/942A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolut

isc Silicon NPN Power Transistor 2SD1268 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB943 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A

isc Silicon NPN Power Transistor 2SD1264 DESCRIPTION Collector-Emitter Breakdown Voltage V = 150V(Min) (BR)CEO High Collector Power Dissipation Complement to Type 2SB940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB941/941A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified o

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION With TO-220Fa package High breakdown voltalge APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For audio frequency power applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(T

isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION Low Collector Saturation Voltage V = 1.2V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1267 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1263 DESCRIPTION Collector-Emitter Breakdown Voltage V = 250V(Min) (BR)CEO High Collector Power Dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY