2SD1264 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1264, 2SD1264ASilicon NPN triple diffusion planar typeFor low-freauency power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SB940 and 2SB940A5.5 0.2 2.7 0.2Features 3.1 0.1High collector to emitter VCEOLarge collector power dissipation PCFull-pack package which can be installed to the heat sink w

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION With TO-220Fa package Complement to type 2SB940/940A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collecto

isc Silicon NPN Power Transistor 2SD1264DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 150V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SB940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(

Power Transistors2SD1269Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94410.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1268Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1262, 2SD1262ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB939 and 2SB939AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switching0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin tothe printe

Power Transistors2SD1261, 2SD1261ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB938 and 2SB938AFeatures High foward current transfer ratio hFE High-speed switching1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed cir

Power Transistors2SD1260, 2SD1260ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB937 and 2SB937AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switchingN type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circui

Power Transistors2SD1266, 2SD1266ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB941 and 2SB941AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink with

Power Transistors2SD1267, 2SD1267ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB942 and 2SB942AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with

Power Transistors2SD1263, 2SD1263ASilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures10.0 0.2 4.2 0.2High collector to base voltage VCBO5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screw 3.1 0.1Absolute Maximum Ratings (TC=25C)Parameter Symbol Ratings UnitCollector to 2SD1263 3501.3 0.2

2SD1265 NPN EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIERVERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Tempera

isc Silicon NPN Power Transistor 2SD1269DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB944Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1266ADESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE

isc Silicon NPN Power Transistor 2SD1265DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB942/942A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolut

isc Silicon NPN Power Transistor 2SD1268DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB941/941A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified o

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION With TO-220Fa package High breakdown voltalge APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For audio frequency power applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(T

isc Silicon NPN Power Transistor 2SD1266DESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1267DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1263DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 250V(Min)(BR)CEOHigh Collector Power Dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY