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2SD1267 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1267

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO220

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2SD1267 Datasheet (PDF)

1.1. 2sd1267.pdf Size:47K _panasonic

2SD1267
2SD1267

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one scr

1.2. 2sd1267.pdf Size:216K _inchange_semiconductor

2SD1267
2SD1267

isc Silicon NPN Power Transistor 2SD1267 DESCRIPTION ·Low Collector Saturation Voltage : V = 1.5V(Max)@ I = 4A CE(sat) C ·Collector-Emitter Breakdown Voltage- : V = 60V (Min) (BR)CEO ·Good Linearity of h FE ·Complement to Type 2SB942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE M

 1.3. 2sd1267 2sd1267a.pdf Size:105K _inchange_semiconductor

2SD1267
2SD1267

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute m

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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