2SD1287 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1287
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 300 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SD1287
2SD1287 Datasheet (PDF)
2sd1280 e.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba
2sd1288.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1286-z.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control
2sd1289.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1286.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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