2SD1293M. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1293M Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1293M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 typ MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 82

Encapsulados: ATR

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2SD1293M datasheet

..1. Size:98K 1
2sd1292 2sd1293m.pdf pdf_icon

8.1. Size:209K toshiba
2sd1294.pdf pdf_icon

8.2. Size:97K rohm
2sd1292.pdf pdf_icon

8.3. Size:37K no
2sd1291.pdf pdf_icon

8.4. Size:38K no
2sd1297.pdf pdf_icon

8.5. Size:117K jmnic
2sd1294.pdf pdf_icon

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol

8.6. Size:74K jmnic
2sd1290.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out

8.7. Size:75K jmnic
2sd1291.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out

8.8. Size:82K jmnic
2sd1296.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a

8.9. Size:28K jmnic
2sd1297.pdf pdf_icon

Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A

8.10. Size:1098K kexin
2sd1295.pdf pdf_icon

8.11. Size:215K inchange semiconductor
2sd1294.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION Included Avalanche Diode- V = 60 15V Z High DC Current Gain h = 2000 20000@ I = 0.5A, V = 5V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

8.12. Size:213K inchange semiconductor
2sd1290.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

8.13. Size:216K inchange semiconductor
2sd1298.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION High DC Current Gain h = 200(Min.)@ I = 6A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low s

8.14. Size:214K inchange semiconductor
2sd1291.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

8.15. Size:221K inchange semiconductor
2sd1296.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low

8.16. Size:220K inchange semiconductor
2sd1297.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low

Otros transistores... 2SD1287 , 2SD1288 , 2SD1289 , 2SD128A , 2SD129 , 2SD1290 , 2SD1291 , 2SD1292 , TIP41 , 2SD1294 , 2SD1295 , 2SD1296 , 2SD1297 , 2SD1298 , 2SD1299 , 2SD13 , 2SD130 .