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2SD1296 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1296
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 150 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 12000
   Paquete / Cubierta: TO126
 

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2SD1296 Datasheet (PDF)

 ..1. Size:82K  jmnic
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2SD1296

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a

 ..2. Size:221K  inchange semiconductor
2sd1296.pdf pdf_icon

2SD1296

isc Silicon NPN Darlington Power Transistor 2SD1296DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low

 8.1. Size:98K  1
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2SD1296

 8.2. Size:209K  toshiba
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2SD1296

Otros transistores... 2SD128A , 2SD129 , 2SD1290 , 2SD1291 , 2SD1292 , 2SD1293M , 2SD1294 , 2SD1295 , BD140 , 2SD1297 , 2SD1298 , 2SD1299 , 2SD13 , 2SD130 , 2SD1300 , 2SD1301 , 2SD1302 .

History: PTB20011 | 2SA486B

 

 
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