2SD1298 Todos los transistores

 

2SD1298 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1298

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 500 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 600

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1298

 

2SD1298 Datasheet (PDF)

1.1. 2sd1298.pdf Size:216K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION ·High DC Current Gain : h = 200(Min.)@ I = 6A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low s

4.1. 2sd1294.pdf Size:209K _toshiba

2SD1298
2SD1298



4.2. 2sd1292.pdf Size:97K _rohm

2SD1298

 4.3. 2sd1297.pdf Size:38K _no

2SD1298

4.4. 2sd1291.pdf Size:37K _no

2SD1298

 4.5. 2sd1296.pdf Size:82K _jmnic

2SD1298
2SD1298

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION ·With TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and

4.6. 2sd1290.pdf Size:74K _jmnic

2SD1298
2SD1298

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outlin

4.7. 2sd1297.pdf Size:28K _jmnic

2SD1298

Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features ·Darlington ·With TO-3PFa package ·Low speed power switching applications Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A PD

4.8. 2sd1294.pdf Size:117K _jmnic

2SD1298
2SD1298

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION ·With TO-3P(I) package ·Included avalanche diode ·High DC current gain ·Darlington connected type APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol LIM

4.9. 2sd1291.pdf Size:75K _jmnic

2SD1298
2SD1298

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outlin

4.10. 2sd1296.pdf Size:221K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION ·High DC Current Gain : h = 1000(Min.)@ I = 15A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 100V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low

4.11. 2sd1290.pdf Size:213K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

4.12. 2sd1297.pdf Size:220K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : h = 1000(Min.)@ I = 15A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 100V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low

4.13. 2sd1294.pdf Size:215K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION ·Included Avalanche Diode- : V = 60±15V Z ·High DC Current Gain : h = 2000~20000@ I = 0.5A, V = 5V FE C CE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

4.14. 2sd1291.pdf Size:214K _inchange_semiconductor

2SD1298
2SD1298

isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

4.15. 2sd1295.pdf Size:1098K _kexin

2SD1298
2SD1298

SMD Type Transistors NPN Transistors 2SD1295 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High collector to emitter VCEO ● Large collector power dissipation PC 0.127 ● Complementary to 2SB968 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
Back to Top

 


2SD1298
  2SD1298
  2SD1298
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21 | WT062 | TL142 | TIP3055T | TIP2955T | MN638S | MJE340T | MJE3055AT | MJ10012T | KTD1945 | KTC2202 | KTC2200 | KSD880W | BUX47AFI | BUX18A | BUW12W | BUW12AW | BUW11W | BUW11AW | BUV48BFI |

 

 

 
Back to Top