2SD1298 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1298
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 500 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 600
Empaquetado / Estuche: TO126
Búsqueda de reemplazo de transistor bipolar 2SD1298
2SD1298 Datasheet (PDF)
1.1. 2sd1298.pdf 
Size:216K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION ·High DC Current Gain : h = 200(Min.)@ I = 6A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low s
4.1. 2sd1294.pdf Size:209K _toshiba
4.2. 2sd1292.pdf Size:97K _rohm
4.3. 2sd1297.pdf Size:38K _no
4.4. 2sd1291.pdf Size:37K _no
4.5. 2sd1296.pdf Size:82K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION ·With TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and
4.6. 2sd1290.pdf Size:74K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outlin
4.7. 2sd1297.pdf Size:28K _jmnic
Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features ·Darlington ·With TO-3PFa package ·Low speed power switching applications Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A PD
4.8. 2sd1294.pdf Size:117K _jmnic
Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION ·With TO-3P(I) package ·Included avalanche diode ·High DC current gain ·Darlington connected type APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol LIM
4.9. 2sd1291.pdf Size:75K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outlin
4.10. 2sd1296.pdf Size:221K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION ·High DC Current Gain : h = 1000(Min.)@ I = 15A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 100V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low
4.11. 2sd1290.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
4.12. 2sd1297.pdf Size:220K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION ·High DC Current Gain : h = 1000(Min.)@ I = 15A, V = 2V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 100V(Min) (BR)CEO ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low
4.13. 2sd1294.pdf Size:215K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION ·Included Avalanche Diode- : V = 60±15V Z ·High DC Current Gain : h = 2000~20000@ I = 0.5A, V = 5V FE C CE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU
4.14. 2sd1291.pdf Size:214K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
4.15. 2sd1295.pdf Size:1098K _kexin
SMD Type Transistors NPN Transistors 2SD1295 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High collector to emitter VCEO ● Large collector power dissipation PC 0.127 ● Complementary to 2SB968 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25
Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
