2SD1299 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD1299
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 150 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: TO126

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2SD1299 Datasheet (PDF)

8.1. Size:98K 1
2sd1292 2sd1293m.pdf pdf_icon

8.2. Size:209K toshiba
2sd1294.pdf pdf_icon

8.3. Size:97K rohm
2sd1292.pdf pdf_icon

8.4. Size:37K no
2sd1291.pdf pdf_icon

8.5. Size:38K no
2sd1297.pdf pdf_icon

8.6. Size:117K jmnic
2sd1294.pdf pdf_icon

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterFig.1 simplified outline (TO-3P(I)) and symbol

8.7. Size:74K jmnic
2sd1290.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

8.8. Size:75K jmnic
2sd1291.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

8.9. Size:82K jmnic
2sd1296.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a

8.10. Size:28K jmnic
2sd1297.pdf pdf_icon

Product Specification www.jmnic.com2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A

8.11. Size:1098K kexin
2sd1295.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD1295TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High collector to emitter VCEO Large collector power dissipation PC0.127 Complementary to 2SB968+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

8.12. Size:215K inchange semiconductor
2sd1294.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1294DESCRIPTIONIncluded Avalanche Diode-: V = 6015VZHigh DC Current Gain: h = 2000~20000@ I = 0.5A, V = 5VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower regulator for line operated TV applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

8.13. Size:213K inchange semiconductor
2sd1290.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1290DESCRIPTIONHigh VoltageWide Area of Safe OperationBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V

8.14. Size:216K inchange semiconductor
2sd1298.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1298DESCRIPTIONHigh DC Current Gain: h = 200(Min.)@ I = 6A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lows

8.15. Size:214K inchange semiconductor
2sd1291.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1291DESCRIPTIONHigh VoltageWide Area of Safe OperationBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V

8.16. Size:221K inchange semiconductor
2sd1296.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1296DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low

8.17. Size:220K inchange semiconductor
2sd1297.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1297DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low

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