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2SD1311 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1311

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 65

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1311

 

2SD1311 Datasheet (PDF)

0.1. 2sd1311.pdf Size:31K _no

2SD1311

0.2. 2sd1311.pdf Size:208K _inchange_semiconductor

2SD1311
2SD1311

isc Silicon NPN Power Transistor 2SD1311DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.1. 2sd1313.pdf Size:206K _toshiba

2SD1311
2SD1311

8.2. 2sd1314.pdf Size:170K _toshiba

2SD1311
2SD1311

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed: t = 3 s (max) (I = 15 A) f CMaximum Ratings

 8.3. 2sd1312.pdf Size:186K _nec

2SD1311
2SD1311

8.4. 2sd1313.pdf Size:121K _mospec

2SD1311
2SD1311

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 8.5. 2sd1313.pdf Size:211K _inchange_semiconductor

2SD1311
2SD1311

isc Silicon NPN Power Transistor 2SD1313DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.ABSOLUTE

8.6. 2sd1314.pdf Size:187K _inchange_semiconductor

2SD1311
2SD1311

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1314DESCRIPTIONHigh DC Current Gain:h = 100(Min) @ I = 15AFE CCollector-Emitter Sustaining Voltage-:V = 450V (Min)CEO(SUS)Fast Switching SpeedLow Collector-Emitter Saturation Voltage-:V = 2.0V (Max) @ I = 15ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable o

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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