2SD1311 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD1311DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed: t = 3 s (max) (I = 15 A) f CMaximum Ratings

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isc Silicon NPN Power Transistor 2SD1313DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.ABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1314DESCRIPTIONHigh DC Current Gain:h = 100(Min) @ I = 15AFE CCollector-Emitter Sustaining Voltage-:V = 450V (Min)CEO(SUS)Fast Switching SpeedLow Collector-Emitter Saturation Voltage-:V = 2.0V (Max) @ I = 15ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable o