2SD1311 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings

A A A

isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. ABSOLUTE

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION High DC Current Gain h = 100(Min) @ I = 15A FE C Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Low Collector-Emitter Saturation Voltage- V = 2.0V (Max) @ I = 15A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable o