2SD132 Todos los transistores

 0.1. Size:51K  panasonic
 2sd1326.pdf

Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1 lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 1.4 0.

 0.2. Size:50K  panasonic
 2sd1327.pdf

Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 Full-pa

 0.3. Size:44K  panasonic
 2sd1328 e.pdf

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

 0.4. Size:39K  panasonic
 2sd1328.pdf

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

 0.5. Size:896K  kexin
 2sd1328.pdf

SMD Type Transistors NPN Transistors 2SD1328 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec