2SD1321 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1321
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 50 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar 2SD1321
2SD1321 Datasheet (PDF)
2sd1326.pdf
Power Transistors2SD1326Silicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.21.4 0.
2sd1327.pdf
Power Transistors2SD1327Silicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col-lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.2 Full-pa
2sd1328 e.pdf
Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sd1328.pdf
Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sd1328.pdf
SMD Type TransistorsNPN Transistors2SD1328SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA156
History: 2SA156
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