2SD1328 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1328
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 25 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 65
Encapsulados: SOT23
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2SD1328 datasheet
2sd1328 e.pdf
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin
2sd1328.pdf
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin
2sd1328.pdf
SMD Type Transistors NPN Transistors 2SD1328 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
2sd1326.pdf
Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1 lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 1.4 0.
2sd1327.pdf
Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 Full-pa
2sd1314.pdf
2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings
2sd1348.pdf
Ordering number 1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2009B [2SB986/2SD1348] Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO. JEDEC
2sd1347.pdf
Ordering number 1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB985/2SD1347] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. EIAJ SC-51 B
r07ds0280ej 2sd1306-1.pdf
Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Col
rej03g0786 2sd1368ds-1.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf
2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a
2sd1383k.pdf
2SD1383K Datasheet High-gain Amplifer Transistor (32V, 0.3A) lOutline l SOT-346 Parameter Value SC-59 VCES 32V IC 0.3A R 4k SMT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. 2)Built-in 4k resistor between base and emitter. 3)Complements the 2SB852K. lApplication l HIGH GAIN AMPLIFIER
2sd1381f.pdf
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features External dimensions (Units mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 3) Good hFE linearity 1.5+0.2 1.6 0.1 -0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB
2sd1385 e.pdf
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual
2sd1302 e.pdf
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle
2sd1385.pdf
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual
2sd1302.pdf
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle
2sd1330 e.pdf
Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.4
2sd1304 e.pdf
Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.3 Parameter S
2sd1350 e.pdf
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man
2sd1350.pdf
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man
2sd1330.pdf
Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm For muting 2.5 0.1 6.9 0.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a
2sd1306.pdf
2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Coll
2sd1367.pdf
2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector
2sd1368.pdf
2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector
2sd1376.pdf
2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k 0.5 k 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base vol
2sd1366.pdf
2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(
2sd1397.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
2sd1306.pdf
SMD Type Transistors NPN Transistors 2SD1306 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
2sd1367.pdf
SMD Type Transistors NPN Transistors 2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo
2sd1368.pdf
SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin
2sd1366.pdf
SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu
2sd1393.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am
2sd1300.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1300 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =
2sd1345.pdf
isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = 0.4V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB983 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power sup
2sd133.pdf
isc Silicon NPN Power Transistor 2SD133 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sd1370.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab
2sd1371.pdf
isc Silicon NPN Power Transistor 2SD1371 DESCRIPTION High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1361.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab
2sd1373.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1373 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge
2sd1398.pdf
isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
2sd1311.pdf
isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sd1344.pdf
isc Silicon NPN Power Transistor 2SD1344 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1360.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliabl
2sd1342.pdf
isc Silicon NPN Power Transistor 2SD1342 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1351.pdf
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 2A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose
2sd1399.pdf
isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1313.pdf
isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. ABSOLUTE
2sd1394.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp
2sd1301.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1301 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 1A CE(sat) C Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f
2sd1377.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amp
2sd1357.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1357 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and r
2sd1378.pdf
isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Saturation Voltage - V = 0.4V(Max)@ I = 0.5A CE(sat) C Complement to Type 2SB1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RAT
2sd1348.pdf
isc Silicon NPN Power Transistor 2SD1348 DESCRIPTION High Collector Current-I = 4.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A, I = 0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SB986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electrical
2sd1374.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1374 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge
2sd1375.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1375 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge
2sd1338.pdf
isc Silicon NPN Power Transistor 2SD1338 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1386.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and
2sd1355.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1355 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB995 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended fo
2sd1372.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1372 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system. ABSOLUTE MAXIMUM RAT
2sd1309.pdf
isc Silicon NPN Darlington Power Transistor 2SD1309 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq
2sd130.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130 DESCRIPTION DC Current Gain -h = 15(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =
2sd1390.pdf
isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150
2sd1307.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1307 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET
2sd1362.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 4A CE(sat) C Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
2sd1365.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1365 DESCRIPTION High Collector-Base Voltage V = 800V(Min) (BR)CBO Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor control systems. Power ampli
2sd1340.pdf
isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1358.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1358 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB998 Minimum Lot-to-Lot variations for robust device performance and re
2sd1314.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION High DC Current Gain h = 100(Min) @ I = 15A FE C Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Low Collector-Emitter Saturation Voltage- V = 2.0V (Max) @ I = 15A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable o
2sd1395.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp
2sd1397.pdf
isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sd1376.pdf
isc Silicon NPN Darlington Power Transistor 2SD1376 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency powe
2sd1391.pdf
isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150
2sd1308.pdf
isc Silicon NPN Darlington Power Transistor 2SD1308 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq
2sd1380.pdf
isc Silicon NPN Power Transistor 2SD1380 DESCRIPTION High Collector Current -I = 2A C Collector-Emitter Breakdown Voltage- V = 32V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB1009 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier application
2sd1352.pdf
isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB989 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sd1336.pdf
isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @ I = 5A, V = 4V FE C CE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sd1396.pdf
isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Otros transistores... 2SD1321 , 2SD1322 , 2SD1323 , 2SD1324 , 2SD1325 , 2SD1325R , 2SD1326 , 2SD1327 , 2SD2499 , 2SD1329 , 2SD1329K , 2SD1330 , 2SD1331 , 2SD1332 , 2SD1333 , 2SD1334 , 2SD1335 .
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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