2SD1329 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1326Silicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.21.4 0.

Power Transistors2SD1327Silicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col-lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.2 Full-pa

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

SMD Type TransistorsNPN Transistors2SD1328SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec