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2SD1329 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1329
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4000
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SD1329

 

2SD1329 Datasheet (PDF)

 8.1. Size:51K  panasonic
2sd1326.pdf

2SD1329
2SD1329

Power Transistors2SD1326Silicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.21.4 0.

 8.2. Size:50K  panasonic
2sd1327.pdf

2SD1329
2SD1329

Power Transistors2SD1327Silicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col-lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.2 Full-pa

 8.3. Size:44K  panasonic
2sd1328 e.pdf

2SD1329
2SD1329

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

 8.4. Size:39K  panasonic
2sd1328.pdf

2SD1329
2SD1329

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

 8.5. Size:896K  kexin
2sd1328.pdf

2SD1329
2SD1329

SMD Type TransistorsNPN Transistors2SD1328SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: MJE1102 | 2G509

 

 
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History: MJE1102 | 2G509

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